Low Temperature Grown and Highly Non-Stoichiometric GaAs and Related Materials
Forty-one papers were presented in five sessions, as follows: Growth Issues, including growth of As and P-based compounds, annealing effects, and characterization by scanning tunneling microscopy (STM) real-time ellipsometry, and positron annihilation; Processing and Characterization, including point- defect and precipitate formations and their characterization by electrical, optical magnetic resonance, and STM techniques; Optical and Optoelectronic Properties, including the materials GaAs, InGaAs, and InGaP, and their responses to light stimulation, explained by various models; InP and Related Ternary Materials, including the Materials InP, InGaAs, InAlAs, and ordered InGaAs/ InAlAs layers, characterized by optically detected magnetic resonance, electrical measurements, tunneling electron microscopy, and photoreflectance; Applications of Nonstoichiometric Materials, including power MESFET design, phase noise measurements, coherent microwave generation, excitonic electro-optic observations, and GaAs on Si device applications
eBook, English, 03 AUG 1994
Defense Technical Information Center, Ft. Belvoir, 03 AUG 1994