Front cover image for First demonstration of photomixing at 1550 nm in ErAs:GaAs

First demonstration of photomixing at 1550 nm in ErAs:GaAs

J. R. Middendorf, W. Zhang, M. Martin, E. R. Brown, 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)
We have extended the discovery of ultrafast extrinsic photoconductivity in ErA:GaAs to the 1550 nm-driven continuous-wave (CW) photomixer. The photocurrent in the photomixer has been measured as a function of 1550 nm laser power and bias voltage. Then the first ever 1550 nm ErAs:GaAs photomixing transceiver was setup and THz power was successfully measured. The work done here represents the first ever CW THz generation in ErAs:GaAs based on extrinsic photoconductivity
Chapter, 2014
2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 201409, 1
2014